What is an acceptor impurity? Write the names of such impurities.
(N/A) An acceptor impurity is a trivalent element (an element with $3$ valence electrons) that is added to an intrinsic semiconductor (like Silicon or Germanium) to create a $p$-type semiconductor.
When a trivalent atom replaces a tetravalent atom in the crystal lattice,it creates a vacancy or a 'hole' because it has one less electron to form the required covalent bonds with neighboring atoms.
This hole acts as a charge carrier and can 'accept' an electron from the valence band,hence the name 'acceptor impurity'.
Examples of acceptor impurities include Boron $(B)$,Aluminum $(Al)$,Gallium $(Ga)$,and Indium $(In)$.
When a trivalent atom replaces a tetravalent atom in the crystal lattice,it creates a vacancy or a 'hole' because it has one less electron to form the required covalent bonds with neighboring atoms.
This hole acts as a charge carrier and can 'accept' an electron from the valence band,hence the name 'acceptor impurity'.
Examples of acceptor impurities include Boron $(B)$,Aluminum $(Al)$,Gallium $(Ga)$,and Indium $(In)$.
Explore More
Similar Questions
Pure $Si$ at $500\, K$ has equal number of electron $(n_e)$ and hole $(n_h)$ concentrations of $1.5 \times 10^{16} \, m^{-3}$. Doping by indium increases $n_h$ to $4.5 \times 10^{22} \, m^{-3}$. The doped semiconductor is of:
MediumAIPMT 2011
View SolutionWhich of the following dopants is used in germanium to form an $n$-type semiconductor?
$A$ donor atom in a semiconductor has a loosely bound electron. The orbit of this electron is considerably affected by the semiconductor material but behaves in many ways like an electron orbiting a hydrogen nucleus. Given that the electron has an effective mass of $0.07 \, m_e$,where $m_e$ is the mass of the free electron,and the space in which it moves has a permittivity of $13 \, \varepsilon_0$,then the radius of the electron's lowermost energy orbit will be close to ................. $\mathring{A}$ (take the Bohr radius of the hydrogen atom as $0.53 \mathring{A}$).
When an impurity is doped into an intrinsic semiconductor,the conductivity of the semiconductor
$A$ potential difference of $2\,V$ is applied between the opposite faces of a $Ge$ crystal plate of area $1\,cm^{2}$ and thickness $0.5\,mm$. If the concentration of electrons in $Ge$ is $2 \times 10^{19}/m^{3}$ and mobilities of electrons and holes are $0.36\,m^{2}/(V\cdot s)$ and $0.14\,m^{2}/(V\cdot s)$ respectively,then the current flowing through the plate will be... (in $,A$)
Difficult
View SolutionVedclass Products
For Students
Vedclass Test Series
Mock tests in real JEE/NEET style with performance analysis. 5-day free trial.
Start Free TrialFor Teachers
Exam Paper Generator
Generate Set A/B/C/D exam papers from 7.5L+ questions in 2 minutes. 3 chapters free.
Try FreeFor Institutes
Online Exam Module
Live online exams with unlimited students, 360° analytics & white-label branding.
See Demo